分子迁移率 and 阈值电压
迁移率温度反比， 低温迁移率增大，载流子速度加快， delay变小
65nm以下 工艺尺寸降低以后 阈值电压升高，delay 变大，
降温 一方面迁移率增大 delay 小， 降温 阈值电压升高delay 变大 到底增大变小 取决于 迁移率和阈值电压 谁起的作用更大
Comments
Join the discussionNo comments yet. Be the first to comment.
More from this blog
crewai_tool
PDFSearchTool How to embedding with your local ollama def pdf_agent(self): pdf_tool = PDFSearchTool("gpt-4-analysis.pdf") pdf_tool2 = PDFSearchTool( pdf = "gpt-4-analysis.pdf", config=dict( ...
VLSI FC user guide - clock gating
compile.clockgate.physically_aware
VLSI - Design For Test (DFT)- JTAG, Boundary SCAN and IJTAG
Digital Timing Basics for VLSI Interview & SoC Design
STA basic concepts